Kwon Group, Physics, Kyung Hee University

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lab:research:gan-opt

This is an old revision of the document!


Effects of grain boundaries on the optical properties of GaN

Integration of semiconductor on 2D atomic layers has offered flexible optoelectronic devices. Especially, GaN grown on chemically vapor-deposited (CVD) graphene has the potential to be utilized for the practical application, but high-angle grain boundaries originated from CVD graphene would degrade the luminescence performance in GaN thin films by acting as a non-radiative recombination centers. We calculated the local electronic structure of grain boundaries to understand the atomistic role of them on physical properties of GaN films.

lab/research/gan-opt.1417078626.txt.gz · Last modified: 2014/11/27 17:57 by smyoon25