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\subsubsection{\texorpdfstring{Morphology transformation of faceted GaN microcrystals}{Morphology transformation of faceted GaN microcrystals}}
\label{sec:morphology_transformation_of_faceted_gan_microcrystals}


We have studied the growth and characterization of patterned and
uniformly distributed GaN microcrystals with well-defined facets and
epitaxy. The microcrystals were grown on a mask pattertned by
lithography, and formed by selective-area epitaxy using metal-organic
chemical vapour deposition. The GaN microcrystals have similar sizes
and shapes. Each microcrystal consists of an upper and lower part,
which are rotated by 30 deg. Transmission electron microscopy shows
that there is a rather clear interface between the two parts of the
crystal, suggesting a sudden change in the growth direction. We
performed \emph{ab initio} calculations for the surface energies of
hexagonal GaN, and the growth morphology is explained based on surface
energy consideration.

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