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\subsubsection{\texorpdfstring{Optical properties of GaAsSb}{Optical properties of GaAsSb}}
\label{sec:optical_properties_of_gaassb}
It is very important to understand the electronic structure of
GaAs and GaSb for fabrication of electronic and optoelectronic
devices. Recently, tenary compounds, GaAs\textsubscript{1-\emph{x}}Sb\textsubscript{\emph{x}}
began to attract much attention from researchers because they
were synthesized and expected to be new materials for optoeletronic
devices. For \emph{x} = 1 and \emph{x} = 0, there have been a lot of computational
studies to investigate their structural, electronic and optical
properties, but few studies for general cases. Moreover, it has
been known that “regular” density functional calculations does not
describe the correct electronic structures including underestimated
band gap and incorrect band splitting. To resolve such issues, we
consider spin-orbit coupling effects and GW\href{https://en.wikipedia.org/wiki/GW_approximation}{GW approximation}
corrections on GaAs\textsubscript{1-\emph{x}}Sb\textsubscript{\emph{x}}
with the composition of \emph{x} = 0, 0.25, 0.5, 0.75, and 1. To
calculate their band structures, we make use of maximally
localized Wannier functions to interpolate GW quasiparticle
band structures. Based on our GW calculations, we discuss
the trend of band gaps at various high symmetric points
in the Brillouin zone with the composition \emph{x}.
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