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\subsubsection{\texorpdfstring{Optical properties of GaAsSb}{Optical properties of GaAsSb}}
\label{sec:optical_properties_of_gaassb}


It is very important to understand the electronic structure of 
GaAs and GaSb for fabrication of electronic and optoelectronic 
devices. Recently, tenary compounds, GaAs\textsubscript{1-\emph{x}}Sb\textsubscript{\emph{x}}
began to attract much attention from researchers because they 
were synthesized and expected to be new materials for optoeletronic 
devices. For \emph{x} = 1 and \emph{x} = 0, there have been a lot of computational 
studies to investigate their structural, electronic and optical 
properties, but few studies for general cases. Moreover, it has 
been known that “regular” density functional calculations does not 
describe the correct electronic structures including underestimated 
band gap and incorrect band splitting. To resolve such issues, we 
consider spin-orbit coupling effects and \href{https://en.wikipedia.org/wiki/GW_approximation}{GW corrections}
on GaAs\textsubscript{1-\emph{x}}Sb\textsubscript{\emph{x}}
with the composition of \emph{x} = 0, 0.25, 0.5, 0.75, and 1. To 
calculate their band structures, we make use of maximally 
localized Wannier functions to interpolate GW quasiparticle 
band structures. Based on our GW calculations, we discuss 
the trend of band gaps at various high symmetric points 
in the Brillouin zone with the composition \emph{x}.

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